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A development of high quality InxGa1−xAs epitaxial layers on Si substrates is essential for high-performance logic transistors due to the low fabrication cost and high compatibility with a conventional Si technology. We investigate the surface of In0.53Ga0.47As epitaxial layers grown by metal-organic chemical vapor deposition on a Si substrate (with InP/GaAs buffer layers) to obtain a high capacitance...
YBa2Cu3O7−δ thick films with the thickness in the range of 1000–2000 nm including different orientations were investigated for the application of microwave devices. Pulsed laser deposition (PLD) has been used to deposit superconducting YBCO thick films on cleaved and polished (100) MgO substrates (10×10 mm). A Nd:YAG laser with the wavelength of 355 nm was used. A YBa2Cu3O7−δ film was grown at 750°C...
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