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Millimetre-wave heterojunction bipolar transistor (HBT) amplifiers have been developed for the first time in the form of alumina substrate MIC. These amplifiers were fabricated using AlGaAs/GaAs HBTs having an emitter size of 1*10 mu m/sup 2/ with a maximum oscillation frequency of 111 GHz. A single-stage amplifier showed a gain of 3.4 dB with a P/sub 1dB/ of 9.6 dBm, and a two-stage amplifier showed...
The design and performance of a dielectric resonator oscillator (DRO) using a heterojunction bipolar transistor (HBT) operating in the K-band frequency are described. The oscillator was fabricated in microstrip integrated circuit (MIC) on an aluminium substrate. The device used was an AlGaAs/GaAs HBT with an n/sup +/-GaAlAs cap layer fabricated through a one-mask multiple self-alignment process. The...
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