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X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and spectrophotometry were used to study the effect of RF power on the properties of gallium and aluminium co-doped zinc oxide (GAZO) thin films for optoelectronic device fabrication. Two peaks appeared in the XPS spectra of the Zn 2p core-level at 1045 and 1022 eV, and these were assigned to $${\text{Zn}}~2{{\text{p}}_{1/2}}$$ Zn 2 ...
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