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A new multi-layered design of joining filler, consisting of a Ti3SiC2 layer and an in-situ reaction TiC transition layer, was proposed to join monolithic SiC. The robust TiC transition layer was formed in-situ by controlling the interface reaction and diffusion process between the deposited Ti layer and the SiC matrix. The joining process was evaluated by the analysis of the interface reaction, phase...
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