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High performance deep-submicron inversion-mode InGaAs MOSFET with ALD Al2O3 as gate dielectric has been demonstrated. Transistors with gate lengths down to 150 nm have been fabricated and characterized. Record high extrinsic transconductance of 1.1 mS/μm has been achieved at Vds = 2.0 V with 5 nm Al2O3 as gate dielectric. Gm can be further improved to 1.3 mS/μm by reducing the gate oxide thickness...
We have systematically studied NMOSFETs, MOSCAPs, and the interfacial chemistry on GaAs (100), (110), (111)A and (111)B-four different crystalline surfaces with direct ALD Al2O3. We found that a much higher drain current on GaAs(111)A NMOSFET can be achieved compared to that obtained on the other 3 surfaces. Also, the results of MOS-CAPs and the interfacial chemistry obtained on the (111)A surface...
Although high-performance inversion-mode InGaAs NMOSFETs are demonstrated, high performance GaAs MOSFETs with directly deposited high-k dielectrics remain a big challenge. Some researchers believe that Fermi-level of GaAs is intrinsically pinned at the mid-gap with directly deposited ALD AI2O3 In this paper, we systematically study the electrical properties of ALD AI2O3 NMOSCAPs, PMOSCAPs, NMOSFETs...
High-performance inversion-type enhancement-mode n-channel MOSFETs on In-rich In0.75Ga0.25As using ALD Al2O3 as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0times107 cm/s at drain voltage of 2.0 V are achieved at 0.75-mum gate length devices. The device performance of In-rich InGaAs NMOSFETs...
In this paper, the authors have demonstrated high-performance inversion-type E-mode In0.65Ga0.35As MOSFETs using ALD high-k gate dielectrics such as ALD Al2O3 and HfO2 with a maximum inversion current as high as 1.05 A/mm and a peak transconductance of 0.37 S/mm. These results suggest In-rich InGaAs could be an ideal channel material which is easy to integrate with high-k dielectrics and has a higher...
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