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We have demonstrated well-behaved accumulation-mode all oxide NMOSFETs with amorphous atomic-layer-deposited (ALD) LaAlO3 gate dielectric stacks on crystalline SrTiO3 substrates. A maximum drain current exceeding 10 mA/mm has been obtained on a 3.75μm-gate-length device, proving a very conductive channel can be formed at the oxide-oxide interface. Four different gate dielectric stacks, which are Lafirst...
High performance deep-submicron inversion-mode InGaAs MOSFET with ALD Al2O3 as gate dielectric has been demonstrated. Transistors with gate lengths down to 150 nm have been fabricated and characterized. Record high extrinsic transconductance of 1.1 mS/μm has been achieved at Vds = 2.0 V with 5 nm Al2O3 as gate dielectric. Gm can be further improved to 1.3 mS/μm by reducing the gate oxide thickness...
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect-transistors (MOSFETs) with 0.75 to 40 mum gate length fabricated on semi-insulating substrates and p-type doped InP epi-layers with atomic-layer-deposited (ALD) Al2O3 and HfO2 as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high- quality gate oxides and unpinning...
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