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A new study on the relation between the electromagnetic interference (EMI) in the flyback converter system and the used superjunction (SJ) DMOS characteristics is proposed in this paper. In comparison to increasing the gate driving resistance (${R} _{ {G}}$ ) or the gate-source capacitance (${C} _{\text{GS}}$ ), it is found that the EMI noise can also be mitigated by reducing the ratio of the oxide...
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