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The effects of gate length Lg on the performance of a top gate silicon nanowire on insulator transistor are studied using three dimensional quantum simulation. From the study it is found that the inverse subthreshold slope and on/off current ratio are very sensitive to gate length. Significant improvement in subthreshold slope and on/off current ratio can be achieved using relatively longer gate with...
The effects of gate length Lg, gate dielectric constant isinox, gate oxide thickness tox, and sourc/drain doping concentration on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire on insulator device are studied using three dimensional quantum simulation. The variation of inverse subthreshold slope and on/off current ratio are very sensitive to gate length, gate dielectric...
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