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We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used...
We present recent developments in controlled single-ion implantation techniques. A low energy (14keV) ion-beam is used to produce shallow phosphorus implants in high-purity Si. Single atom control during implantation is achieved by monitoring on-chip p-i-n detectors, integrated within the device structure, while positional accuracy of 20nm is achieved via a nanolithographic resist mask. This technique...
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