The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) on Si substrate was obtained with 18 nm silicon nitride (Si3N4) grown by low-pressure chemical vapour deposition (LPCVD) as the gate insulator. The D-mode MIS-HEMT shows a high Idss of 16.8 A at Vg = 3 V, a high breakdown voltage (BV) of 600 V and a low-specific on-resistance of 2.3 mΩ·cm2. The power device figure...
A technique for fabrication vertical position-controllable GaN nanowires is developed and discussed. The fabrication process combines selective area growth of GaN pyramids on substrate masked with hexagonal hole pattern and wet chemical etching of the grown GaN pyramids. GaN nanowires are fabricated to demonstrate this technique. The mechanisms for the formation of the vertical nanowires are also...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.