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Due to the thermal mismatch between GaN and Si, GaN grown on Si at elevated temperatures (~1100 °C) usually exhibits large internal residual stress. Therefore, the characterization of residual stress in GaN on Si substrate is of particular importance. In this work, a type of reliable bent-beam strain sensor was used to estimate residual stress in suspended GaN microstructures. The device was modeled...
A technique for fabrication vertical position-controllable GaN nanowires is developed and discussed. The fabrication process combines selective area growth of GaN pyramids on substrate masked with hexagonal hole pattern and wet chemical etching of the grown GaN pyramids. GaN nanowires are fabricated to demonstrate this technique. The mechanisms for the formation of the vertical nanowires are also...
We develop a technique for fabrication position-controllable GaN nanostructures. The fabrication process combines selective area growth of GaN structures on patterned substrate and wet chemical etching of the grown GaN structures. GaN nano-tips, nano-pillars and nano-blades are fabricated to demonstrate this technique. The mechanisms of the fabrication process are also discussed.
The authors developed a SiN-masked GaN-on-patterned-Silicon (GPS) technique for fabricating suspended GaN microstructures without direct GaN etching. The masked GPS technique combines masked selective area growth (SAG) of gallium nitride (GaN) on patterned silicon substrate and subsequent sacrificial undercutting of GaN microstructures by isotropic wet etchant. The experimental results show that the...
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