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p-type InP:Zn epilayers were grown by using metalorganic chemical vapor deposition. After the growth of InP:Zn epilayers, Mn was evaporated on top of the InP:Zn epilayers by using a molecular beam epitaxy system. Then, Mn was diffused into the InP:Zn epilayers by annealing. InMnP:Zn epilayers were annealed at 600 °C for 60 s with Mn concentrations of both ∼1.5 and ∼3.0%. The optical transitions related...
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