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In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct...
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