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Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this work, we demonstrate the 1-nm-spatial resolution of SSRM on pn junction delineation by comparing with three-dimensional device simulation. A five-order dynamic range of carrier concentration is also confirmed on staircase sample. A systematic comparison...
The dependence of the interface-trap-induced scattering on the electron kinetic energy (epsivele) in nMOSFETs is investigated experimentally. The procedure to extract the accurate epsivele dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as epsivele increases, the interface-trap-induced...
The trade-off between Tinv scaling and carrier mobility (mu) degradation in deeply scaled HK/MG nMOSFETs has been investigated based on experimental results. Ion, components are analyzed in terms of NS, vinj and SCE in Lg= 25 nm devices for the first time. As a result, it is clarified that the aggressive Tinv scaling can achieve the performance improvement even if mu degradation occurs in some degree,...
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