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The intermediate band solar cell (IBSC) is a kind of novel photovoltaic device with very high efficiency limit. The intermediate band (IB) material is a key factor for fabricating high-performance IBSC. We explore to prepare IB material by Co implantation in silicon followed by a rapid thermal process (RTP). The results show that an IB is successfully formed in Si layer. The IB is located at about...
In this work, broken silicon (Si) wafers with electrical resistivity of 1Ωcm, 0.1Ωcm and 0.01Ωcm and 0.001Ωcm were ball-milled to form Si powders for being used as anode materials for Lithium ion batteries (LIBs). As a result, in relation to other three Si wafers, 0.001Ωcm-Si-wafer presents the highest first discharge and charge capacity, which is 543.4mAhg−1and 457.7mAhg−1 (Si: Carbon=5: 95, weight...
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