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This presented study focuses on the impact of gate-source voltage waveforms on power added efficiency performances of GaN HEMTs for the design of class F and class F-1 amplifiers. It is shown that second-harmonic signal injection at the gate port of transistors can lead to efficiency improvements in the case of class F operation and efficiency deteriorations in the case of class F-1 operation. This...
Activities have been carried out to determine the best electrical operating conditions of GaN HEMT that enable maximum power added efficiency at L-band for switch mode power amplifiers (class F, inverse class F and class E). Satellite radio navigation applications (Galileo) are targeted. Maximization of power added efficiency is of prime importance to save DC power consumption, reduce self heating...
This paper presents a technique to improve the power added efficiency (PAE) of GaN power amplifiers by an appropriate shaping of the gate source voltage waveform. The proposed technique is based on second harmonic injection at the transistor input. It is applied here to a 15 W GaN HEMT die from Cree that has been characterized using an harmonic load pull test bench at L-band. The work reported here...
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