The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20°C-80°C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113 K.
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.
We fabricated laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique, which showed laser emission at 1.58 mum above the threshold current of 162 mA in pulsed mode.
We fabricated laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique, which showed laser emission at 1.7 mum above the threshold current of 400 mA in pulsed mode.
We demonstrate scale-dependent near-field photoluminescence of InAs quantum dots. Our analysis, based on eigen-decomposition, leads to a novel non-pixelated memory architecture thanks to spectral diversity obtained at an optimal scale of optical near-fields.
We demonstrated nanophotonic gate operation of coupled InAs quantum dots using the pump-and-probe micro-photoluminescence measurement. The result indicates that we can select either AND- or NOT-gate operation by controlling the pulse intensity.
We observed the dark states of coupled InAs quantum dots via an optical near-field. The experimental results show that the dipoles of near-field coupled InAs quantum dots are distributed with an anti-parallel configuration.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.