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For type II InAs/GaSb superlattice (SL) structure, we reveal that, if the overall strain of the SLs is balanced to be zero, there exists a quantitative relationship between the interface (IF) materials and the SL constituent layers, which can serve as guidance on how to design the specific IF structure and on how to tune the strain. Controlled growth of a series of samples was performed to vary the...
Thermal processing of strained In 0.2 Ga 0.8 As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77K photoluminescence efficiency and electron emission from the active layer, due to the removal of nonradiative centers...
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