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This paper reports the study of low temperature radical oxidation by using highly concentrated ozone gas in a single-wafer rapid thermal processor. As device structures continue to shrink in geometry, integration of new materials and the complexity of process flows demand growth of high quality oxides with reduced thermal budget. This requirement poses a major challenge for thermal oxidation since...
The effects of high-concentration ozone gas (~25%) exposure at atmospheric pressure with and without ultraviolet (UV) irradiation to a 4H-SiC(0001) surface has been investigated by X-ray photoelectron spectroscopy (XPS). The C 1s XPS spectrum for the 4H-SiC surface after standard RCA cleaning showed the appearance of a chemically shifted peak on the higher binding energy side of the SiC bulk peak...
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