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In order to investigate the effects of vacuum annealing on the properties of titanium boride films (TiBx) on a (100)Si substrate, TiBx/Si samples were prepared by the co-evaporation process and then annealed in the temperature range of 300≈1000°C. The interfacial reaction of TiBx/Si systems and the thermal stability of non-stoichiometric TiBx films (0≤B/Ti≤2.5) were investigated by means of sheet...
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