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The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption...
This paper shows a customized MGy radiation tolerant instrumentation amplifier. The 65 nm CMOS-based ASIC amplifier has an offset smaller than 1 µV and a noise level below 50 nV/√Hz from DC. It consumes less than 5 mW and has a common-mode-rejection-ratio larger the 100 dB. In addition, it allows a programmable gain setting from 8,16,32,64,128 to 256. The performance of this instrumentation amplifier...
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