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A two-terminal memristor device is a promising digital memory for its high integration density, substantially lower energy consumption compared to CMOS, and scalability below 10 nm. However, a nanoscale memristor is an inherently stochastic device, and extra energy and latency are required to make a deterministic memory based on memristors. Instead of enforcing deterministic storage, we take advantage...
We describe a generic exponential model with four parameters for thin-film memristive devices. This model is used to analyze the time dependency of the threshold voltage which defines the transition between non-programming and programming phases of the device. A relationship between timescale of operation and threshold voltage is derived. Furthermore, self-terminating programming is considered using...
We report studies on nanoscale Si-based memristive devices for memory and neuromorphic applications. The devices are based on ion motion inside an insulating a-Si matrix. Digital devices show excellent performance metrics including scalability, speed, ON/OFF ratio, endurance and retention. High density non-volatile memory arrays based on a crossbar structure have been fabricated and tested. Devices...
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