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The physical mechanism of the time, emitter lateral dimension (AE) and low-high temperature dependent degradation under mixed-mode stress for C-doped SiGe HBTs (SiGe:C HBTs) on thin-film silicon-on-insulator (SOI) is investigated. We focus on the impact of mixed-mode stress on device characteristics such as base current (IB) and current gain (β) degradation rate, device scaling issue and low-high...
The study of production, transfer and accumulation of space charge in silicon rubber (SIR) under direct current (DC) is significant for the research of new high voltage (HV) DC cable accessories and the accessories' stable operation. In this paper, based on SIR materials used for cable accessories and the actual low working stress, the accumulation of space charges in SIR was measured under low DC...
Since Fe-based FeAlGaPCB bulk glassy alloy (BGA) was firstly synthesized in 1995 [1], a number of Fe-based BGAs have been developed [2-7] in last two decades. These Fe-based BGAs have relatively high GFA, which leading to the formation of glassy alloy rods prepared by copper mold casting with much lower cooling rates than that of amorphous alloy thin ribbons produced by melt-spinning. However, their...
In this paper surface discharge along the oil-pressboard interface was investigated. Surface discharges were measured both in time domain by means of an oscilloscope and as phase resolve patterns. The effect of temperature from 20 °C to 90 °C on surface discharge inception, extinction and surface flashover voltage were investigated. Trend of number and maximum magnitude of PD was compared for 20 °C...
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