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A scalable poly-Si/AlN/HfSiO gate stack, implementing a new aluminum nitride (AlN) cap layer, combined with oxygen diffusion barrier, halo and counter doping engineering, high temperature spike anneal for gate and junction activation, and optional inverted gate implant, has been successfully developed to fully offset the large threshold voltage (Vt) shifts in poly-Si/HfSiO devices and achieve good...
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