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A new dielectric barrier film using fluorine-doped silicon-oxycarbide (SiCOF) for 65nm multilevel interconnect in very large scale integration (VLSI) has been fabricated. The film is deposited by the addition of silane fluoride (SiF 4 ) to tetramethylsilane (4MS) and in carbon dioxide (CO 2 ) plasma enhanced chemical vapor deposition (PECVD) system. The refractive index and dielectric...
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