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High-quality Cu4SnS4 thin films are prepared by annealing chemical bath-deposited SnS–CuS stacks in a graphite box. The effects of annealing temperature on the grain growth and morphology of these films are investigated in this study. Results showed that the films prepared at 500–580°C yielded an orthorhombic crystal structure with lattice parameters a=1.371nm, b=0.766nm and c=0.643nm, a crystallite...
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