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The structures, formation energies and stable configurations of elementary defects (vacancies, antisite defects and self-interstitials) in 3C- and 4H-SiC are studied using classical molecular dynamics simulation with a recently developed interatomic potential. The defect structures in 3C-SiC are relatively simple, but those in 4H-SiC are more complex. The interstitials between hexagonal and trigonal...
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