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Transport properties of a novel quasi-ballistic quantum wire field-effect transistor are studied experimentally and then discussed in relation to a theory for dirty Tomonaga–Luttinger (T–L) liquids. The sample was prepared by constricting lithographically an epitaxially grown In0.1Ga0.9As/GaAs quantum well channel, whose bottom interface is corrugated by a quasi-periodic array of multi-atomic steps...
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