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60 GHz LNA/PAs, phase shifters (PS), combiners and switches were designed for integrated phase array in CMOS. These components achieved the best known power consumption and size compared to previous publications reported, as a result of the methodology flow and layout optimization that was developed for 60 GHz designs. The extensive use of passive architecture together with the compact layout will...
A 60 GHz 4 element bidirectional phased-array TX/RX chip with a 2 bit phase shifter and IF converter to/from 12 GHz, using 90 nm CMOS process, is described. The array features 7 dB gain, measured noise figure (NF) of 9 dB, IP1dB of -19 dbm for RX, and output Psat of +3.5 dBm for TX , drawing 60 mA from a 1.3-V supply. The RMS amplitude and phase error of the phase shifter is 0.7 dB and 2deg max respectively...
This paper presents a 60 GHz LNA designed in a 90 nm CMOS process with 6 metals Cu thick metal, and Ft/Fmax of 100 GHz/150 GHz demonstrating best known noise figure, gain, power consumption and size compared to earlier 60-GHz LNAs reported. It features 15 dB of gain, a measured noise figure (NF) of 4.4 dB, while drawing 3 mA from a 1.3-V supply. The use of spiral inductors enables a reduction in transistor...
We present an InP HBT distributed amplifier with a bandwidth of 75 GHz, gain of 14 dB, and power consumption of 78 mW. The HBTs had a 600 nm thick collector, and hence relatively low fT and fMAX of 84 GHz and 150 GHz respectively. The thick collector is a tradeoff required in optoelectronic integrated receivers, in which the PIN diode layers are the same as the base collector layers. To obtain high...
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