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Ge1-xSnx alloy provides a new aspect into the growth, strain, electronic, and energy band engineering technology. The future prospect of Ge1-xSnx application is very exciting and promising for not only electronic but also optoelectronic applications.
We have achieved the heteroepitaxial growth of a pseudomorphic Ge0.954Sn0.046 layer without Sn precipitation on a Ge(110) substrate. The strain in the Ge1−xSnx layer preferentially relaxed along [001] direction with annealing over 500C due to the anisotropic layout of glide planes on Ge(110) surface. These results suggest that an uniaxially compressive strained Ge1−xSnx structure can be realized...
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