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This work describes the design and implementation of an inductorless, low power, high conversion gain fully differential subharmonic down-conversion mixer for 2.4 GHz application. A complementary current-reuse technique is adapted between the transconductance stage and LO switching stage to boost the conversion gain without additional power consumption by reusing the DC current of the LO switching...
This paper presents an ultra-low voltage and low power current bleeding CMOS double balanced mixer targeted for ZigBee application in 2.4GHz operating frequency band. The proposed mixer uses a modified CMOS current bleeding mixer topology adapting the forward body bias design technique integrated with a NMOS based current bleeding transistor, PMOS based local oscillator (LO) switching stage and on-chip...
Band-pass-filters (BPF) are critical components in the RF modules. Conventional discrete component solutions, like those from discrete SMDs or LTCC (Low temperature co-fired ceramic) technology. Typically, these passive components consume 60%–70% of the footprint area. As miniaturization is becoming a trend for cost-reduction of wireless products, there is a need to make these devices in smaller form-factors...
Band-pass-filters (BPF) are critical components in the RF modules. Conventional discrete component solutions, like those from discrete SMDs or LTCC (Low temperature co-fired ceramic) technology. Typically, these passive components consume 60%–70% of the footprint area. As miniaturization is becoming a trend for cost-reduction of wireless products, there is a need to make these devices in smaller form-factors...
Nowadays, inductors are prone to be integrated into chip surface for miniaturization considerations in some RF applications, but high Q factor cannot be achieved because of the lossy CMOS Si substrate. In this study, single layer spiral coils of one turn were fabricated on Si wafers with high and low resistivity via redistribution process and a polyimide layer were added on the wafer with low resistivity...
The authors report the demonstration of high-speed GaNAsSb/GaAs p-i -n waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- m-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 m is sandwiched by GaAs and AlGaAs cladding layers. The device exhibits a record value of cutoff frequency of 16.5 GHz.
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