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A novel dual-band CMOS SP4T switch with P1dB of higher than 31 dBm is designed to operate at 0.9 GHz and 1.8 GHz. In the Rx switch path, a carefully designed switched resonator is incorporated in order to block high RF signal power from the power amplifier at the Tx path as well as to maintain low insertion loss in the Rx mode simultaneously. In Tx switch devices, a body substrate tuning technique...
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