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A new phase change memory of 68% lower reset current is demonstrated using nano-crystalline doped-Ge2Sb2Te5 with high electrical resistivity and low thermal conductivity. Endurance of > 1×107 cycles and enhanced crystallization temperature (∼ 215 ºC) are also achieved. Nano-crystalline GST makes it possible to design 4F2 cross-point cells with simple bottom electrode structure.
We successfully arrayed microtubules in nanotracks with defined polarities, and visualized the dual transport of Qdot525 and Qdot655, carried by kinesin and dynein, respectively. Focusing on an individual MT manipulation by a nanotrack, we improved orientation efficiency by up to 90%, in comparison to 70% that is accomplished using conventional methods. This was realized by integrating nanofabrications...
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