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We report a microscopic study of the Au/5Å SiN x/GaAs Schottky barrier based on scanning near-field optical microscopy. Photocurrent yield microimages taken at different photon energies reveal non-topographic features. Taking into account their dependence on photon energy and bias, such features are consistent with lateral variations of the local density of states related to defects. The results,...
We studied the Pt/n-GaP buried Schottky junction by several spatially resolved techniques to correlate the chemical inhomogeneities of the interface with the spatial variations of the diode transport properties. The recombination rate fluctuations and small spatial variations (3-8 meV) of the Schottky barrier height were correlated with the local stoichiometry of the bare GaP surface and of the fully...
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