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We optimized the triode structure for carbon nanotube electron beam(C-beam) application with carbon nanotube emitters grown with resist-assisted pattering process. The CNT emitters grown through the RAP process have a structure in which a number of CNTs are congregated, and the graphitization post-treatment process proceeded in order to enhance their adhesive strength and stability. The gate mesh...
We introduced a carbon nanotube electron beam (C-beam) exposure technique for thin films for display devices. As an electron source, the CNT emitters were placed on cathode electrode. Electrons through gate mesh, with higher accelerated energy, impact thin film on the anode plate. For display device application, amorphous silicon (a-Si:H) thin films were deposited on glass substrate and then C-beams...
In this study, we optimized vertically aligned carbon nanotube electron beam (C-beam) with triode structure for cathodoluminescence of Zinc Oxide (ZnO) thin films, which solution process fabricated. Efficient cathodoluminescences were observed with C-beam exposed ZnO thin films. The origin of the luminescence were confirmed by SEM measurement. The luminescence appeared to the structural modification...
We studied the electron emission of silicon coated CNT with various O2 partial pressure. The electron emission currrent shows differen reduction rate with growth condition and gas pressure. However, a degradation rate of electron emission current of silicon coated CNTs show deareases compared with conventional CNTs. Enhanced life time with reduced degradation rate with silicon coated CNTs appear to...
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