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We report on the development of a 0.15µm gate length InAlN/GaN HEMT on SiC substrate technology for applications in K and Ka-Bands. Measurements results of pulsed I–V, S-parameters, load-pull and RF noise figure are presented. Devices exhibit a maximum DC transconductance of 350mS/mm and Idss of 0.95A/mm. Cut-off frequencies FT and Fmag of 45GHz and 100 GHz are reached. Load-pull power measurements...
GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle. This paper will present the status of current AlGaN/GaN technology.
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