The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band...
A report is presented on the specific design of a GaN HEMT cascode cell demonstrating significant improvement for flip-chip distributed power amplifiers. The active device is a 8 times 50 mum AlGaN/GaN HEMT grown on SiC substrate. The GaN-based wafer integrating the active part is flip-chipped onto an A1N substrate via electrical and mechanical bumps. The cascode cell integrates matching elements...
This paper reports on the design of a cascode GaN HEMT cell dedicated to 4-18 GHz flip-chip distributed power amplifier. The active device is a 8x50 mum AlGaN/GaN HEMT grown on SiC substrate. The GaN-based die which integrates the active cascode cell and its matching elements is flip-chipped via electrical bumps onto an AIN substrate. The matching elements of the balanced cascode cell are composed...
This paper reports on the design of a cascode GaN HEMT distributed power amplifier demonstrating significant improvement of the best power performances reported to date. The active device is a 8/spl times/50 /spl mu/m AlGaN/GaN HEMT grown on siSiC. The distributed power amplifier integrates 4 cascode cells capacitively coupled to the gate line for power optimization. The active part made of the 4...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.