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AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications, due in particular to their high current densities and their thinner barrier layers than in AlGaN/GaN HEMTs that minimize short channel effects. In this paper, we present the first published power results of two K-band hybrid amplifier demonstrators at 20GHz and 26.5GHz using 0.25µm gate length devices. At these...
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers.
GaN Based HEMT's have shown superior power-frequency performances than lower band-gap materials. In this paper, we present the design of broadband hybrid 6-18 GHz amplifiers based on AlGaN/GaN HEMT technology with a flip chip approach. Measurements of a single ended amplifier based on a 0.6mm gate width device allow us to achieve more than 1.8W in the [6.5-16] GHz bandwidth corresponding to a power...
GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle. This paper will present the status of current AlGaN/GaN technology.
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