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This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Korrigan project launched by the European Defense Agency. GaN has already demonstrated excellent output power levels, nevertheless demonstration of excellent PAE associated to very high power in MMIC technology is still challenging. In this work, we present State-of-the-Art results on AlGaN/GaN MMIC amplifiers...
We report in this paper on the improvement of the model presented in [1] for AlGaN/GaN HEMT especially focused on switch applications. We developed a new method to measure accurately the ON resistance Ron versus the junction temperature, and will compare here our thermal model to the measurements realized in pulsed I(V) and in [S]-parameters. We also focused on the influence of drain and gate impedances...
We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with...
GaN-based HEMT's have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules...
GaN-based HEMT's have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules...
We present here a new set of equations for modeling the I-V characteristics of FETs, particularly optimized for AlGaN/GaN HEMTs. These equations describe the whole characteristics from negative to positive breakdown loci, and reproduce the current saturation at high level. Using this model allow reducing the modeling procedure duration when a same transistor topology is used for several applications...
This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band...
This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2-stages amplifier. To our knowledge, these results present a new state-of-the-art of X-Band MMIC power amplifiers.
GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle. This paper will present the status of current AlGaN/GaN technology.
This paper reports on the design of a cascode GaN HEMT cell dedicated to 4-18 GHz flip-chip distributed power amplifier. The active device is a 8x50 mum AlGaN/GaN HEMT grown on SiC substrate. The GaN-based die which integrates the active cascode cell and its matching elements is flip-chipped via electrical bumps onto an AIN substrate. The matching elements of the balanced cascode cell are composed...
This paper reports on the design of a cascode GaN HEMT distributed power amplifier demonstrating significant improvement of the best power performances reported to date. The active device is a 8/spl times/50 /spl mu/m AlGaN/GaN HEMT grown on siSiC. The distributed power amplifier integrates 4 cascode cells capacitively coupled to the gate line for power optimization. The active part made of the 4...
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