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Local and selective far-infrared ray laser annealing (FIR-LA) process with very short heating duration (<100μs) and low substrate temperature (<400oC) enables sequentially stacked gate-first nanowire FETs (NWFETs), including 3D+ Si NWFET and poly-Ge junctionless (JL) NWFET, and BEOL compatible monolithic 3D+ nanoelectronics. The 3D+ Si NWFETs, demonstrated by green nano-second laser crystallization...
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