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CuInSe2 thin films were prepared by one-step electrodeposition process using a simplified two-electrodes system. The films were deposited, during 5, 10, 15 and 20 min, from the deionized water solution consisting of CuCl2, InCl3 and SeO2 onto ITO-coated glass substrates. As-deposited films have been annealed under vacuum at 300 °C during 30 min. The structural, optical band gap and electrical resistivity...
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