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We study the blistering process in H-implanted semipolar (112¯2) GaN. Compared with the (0001) orientation, the blistering kinetics of (112¯2) GaN revealed lower activation energies of 0.27 and 0.92eV in the higher- and lower-temperature regimes, respectively. H-induced internal pressure and stress in the surface blisters were found to be dependent on the crystal orientation of GaN. Based on this...
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