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Chemical mechanical polishing (CMP) processes have been widely used in many fields with the ability to obtain an ultra-smooth surface. However, a comprehensive understanding of the material removal mechanisms at single pad asperity scale is still lacking, where a large number of abrasive particles are entrapped in the pad asperity/wafer microcontact area and then participate into polishing. In this...
Subsurface damage (SSD) and grinding damage induced stress (GDIS) result in deformation and strength degradation of a ground silicon wafer. The Stoney equation is widely used as a non-destructive method for finding GDIS in a silicon wafer prepared by the rotational grinding method. However, the basic assumptions of the Stoney equation ignore the detailed information on the GDIS in a ground wafer....
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