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At high-frequency applications, the gate drive loss of the power metal oxide semiconductor field-effect transistor (MOSFET) becomes quite significant. A new dual-channel low side resonant gate drive circuit is proposed in this paper. The proposed drive circuit can provide two symmetrical drive signals for driving two MOSFETs. It charges and discharges the MOSFET gate capacitor with a constant current...
In this paper, a new resonant gate drive circuit is proposed for power MOSFETs. The proposed circuit achieves quick turn on and turn off transition times to reduce switching loss and conduction loss in power MOSFETS. In addition, it can recover a portion of the CV2 gate energy normally dissipated in a conventional driver. The circuit consists of four control switches and a small resonant inductance...
At high frequency applications, the gate drive loss of the power MOSFET becomes quite significant. A new dual channel low side resonant gate drive circuit is proposed in this paper. The proposed drive circuit can provide two symmetrical drive signals for driving two MOSFETs. It can recover most of the driving energy and clamp the gate and source voltage of the driven MOSFETs to either drive voltage...
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