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Ni-decorated SiC powders were fabricated by using an improved solution chemical method. The dielectric properties were investigated in the temperature range of 373–673K at frequencies of 8.2–12.4GHz (X-band). Compared to the naked SiC, the complex permittivity and loss tangent of Ni-decorated SiC are significantly improved in the frequency and temperature ranges investigated. Strong temperature-dependent...
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