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The effect of CVD Mn oxide layer as a barrier layer to Cu diffusion for 3-D TSV was characterized. The impact of oxide substrate on the barrier property of a planar Mn oxide was evaluated by XPS method. Planar Mn oxide layer of 20-nm thickness formed over thermal oxide showed an excellent barrier property to Cu diffusion after annealing at 500 , whereas the Mn oxide over P-TEOS oxide...
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