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Hole injection barriers at the regioregular-poly-3(hexylthiophene) (RR-P3HT)/metal (Cu or Ag) interface were investigated using the accumulated charge measurement (ACM). Thermal annealing of RR-P3HT at 55 °C decreased the injection barrier. RR-P3HT thermally annealed in N2 forms an ohmic contact with Ag and a Schottky contact with Cu. The obtained values of the injection barriers, ϕB were well expressed...
A new technique to determine the injection barrier using displacement current measurement (DCM) is reported. This technique was applied to junctions of metal-free phthalocyanine (H2Pc)/Ag and H2Pc/MoO3/Ag. The injection barriers from Ag to the highest occupied molecular orbital of H2Pc and to the lowest unoccupied molecular orbital of H2Pc were evaluated and found to be 0.4 V and 1.8 V, respectively...
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