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CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
We demonstrate control of energy states in epitaxially-grown sub-monolayer quantum dots by engineering of the internal bandstructure of the dots. We show shifts of the quantum dot ground state energy from 1.38eV to 1.68eV.
An integrated tunable C band laser fabricated in a commercial CMOS foundry is discussed. The laser is embedded in the silicon chip, and is hermetically sealed. Preliminary optical characterization results are presented.
A new rear contacting scheme using low temperature processes to form localised contacts without the use of photolithography has been developed. It uses randomly nucleated, aluminium induced, localised regions of solid phase epitaxial growth of p/sup +/ silicon onto the rear surface of a wafer through a thick rear surface passivating oxide. Results have shown that a suitable ohmic contact to the substrate...
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