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An integrated tunable C band laser fabricated in a commercial CMOS foundry is discussed. The laser is embedded in the silicon chip, and is hermetically sealed. Preliminary optical characterization results are presented.
Technology challenges and solutions in the development and fabrication of high-density three dimensional (3D) chip integration structures have been investigated. Critical 3D integrated circuit (IC) enabling technologies, such as through silicon via (TSV), wiring and redistribution layer (RDL), wafer thinning and handling, micro-bump (μ-bump) processes and joining, that form the building blocks for...
For transistor research and development, one of the important figures of merit is the carrier mobility. The measurement of mobility is cumbersome in large devices, and nearly impossible in nano scale devices. Very often, effective mobility (μeff) is extracted from the I-V curve instead. There are many pitfalls in equating μeff to mobility (μ), including charge-trapping and series resistance effects...
A compact high-accuracy rail-to-rail CMOS operational amplifier (Op-Amp) is presented using strong inversion techniques to achieve power consumption of 90μW under 1.8V supply voltage. Two complementary differential pair techniques and one-versus-three current mirror compensation techniques are adopted to realize wide input dynamic range, while the output stage provides rail-to-rail output drive through...
Modern microelectronics technologies play important roles in body sensor networks (BSN). In this paper a field programmable analogue ASIC working on the discrete-time mode for biomedical signal filtering was presented. The ASIC we have developed incorporates a switched-capacitor based analogue module, a current source, a voltage source, an oscillator, and a double-phase non-overlapping clock source...
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