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Heterojunction (HJ) devices have been realized by depositing gallium-doped Ge nanocrystals (Ge-ncs) on an n-type crystalline silicon substrate. Transmission electron microscopy (TEM) and Raman spectroscopy have revealed that the Ge-ncs were formed in SiO2 matrix, with sizes in the range of 3.5-6.2 nm. The rapid thermal annealing for dopants activation of Ge-ncs in SiO2 matrix was investigated by four...
This paper describes a low-profile three-dimensional silicon/parylene microelectrode array as basis for practical neural prostheses for use in the central nervous system. The circuit areas of the silicon probes, containing mixed-signal CMOS circuitry for neural stimulation/recording, can be folded over to reduce the overall height of the microassembled array above the cortical surface. The low-profile...
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